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BSM 50 GB 170 DN2
IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 27 Ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
VCE
IC
Package HALF-BRIDGE 1
Ordering Code C67070-A2701-A67
1700V 72A
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 72 50
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
144 100
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
500
W + 150 -55 ... + 150 0.25 0.75 4000 20 11 F 55 / 150 / 56 Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Jul-31-1996
BSM 50 GB 170 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.6 0.4 1.6 6.2 3.9 5.3
V
VGE = VCE, IC = 4 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 50 A, Tj = 25 C VGE = 15 V, IC = 50 A, Tj = 125 C
Zero gate voltage collector current
ICES
0.5 -
mA
VCE = 1700 V, VGE = 0 V, Tj = 25 C VCE = 1700 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
18 8 0.64 0.25 -
S nF -
VCE = 20 V, IC = 50 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Jul-31-1996
BSM 50 GB 170 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit
td(on)
350 700
ns
VCC = 1200 V, VGE = 15 V, IC = 50 A RGon = 27
Rise time
tr
150 300
VCC = 1200 V, VGE = 15 V, IC = 50 A RGon = 27
Turn-off delay time
td(off)
650 1000
VCC = 1200 V, VGE = -15 V, IC = 50 A RGoff = 27
Fall time
tf
90 140
VCC = 1200 V, VGE = -15 V, IC = 50 A RGoff = 27
Free-Wheel Diode Diode forward voltage
VF
2.3 2.1 2.8 -
V
IF = 50 A, VGE = 0 V, Tj = 25 C IF = 50 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
0.3 -
s
IF = 50 A, VR = -1200 V, VGE = 0 V diF/dt = -600 A/s, Tj = 125 C
Reverse recovery charge
Qrr
C
IF = 50 A, VR = -1200 V, VGE = 0 V diF/dt = -600 A/s Tj = 25 C Tj = 125 C
4 12 -
Semiconductor Group
3
Jul-31-1996
BSM 50 GB 170 DN2
Power dissipation Ptot = (TC) parameter: Tj 150 C
550 W
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 3
A
tp = 1.6s
Ptot
450 400 350 300 250
IC
10 2
10 s
10 1
100 s
1 ms
200 150 100 50 0 0 20 40 60 80 100 120 C 160 10 -1 0 10 10
1
10 0
10 ms
DC
10
2
10
3
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
90 A
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
IGBT
K/W
IC
70 60 50 40 30 20
ZthJC
10 -1
D = 0.50 0.20 10
-2
0.10 0.05 0.02 single pulse 0.01
10 0 0 10 -3 -5 10
20
40
60
80
100
120
C
160
10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Jul-31-1996
BSM 50 GB 170 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
100 A
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
100 A 17V 15V 13V 11V 9V 7V
IC
80 70 60 50 40 30 20 10 0 0.0
IC
80 70 60 50 40 30 20 10 0 0.0
17V 15V 13V 11V 9V 7V
1.0
2.0
3.0
4.0
V
6.0
1.0
2.0
3.0
4.0
V
6.0
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
200 A
IC
160 140 120 100 80 60 40 20 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Jul-31-1996
BSM 50 GB 170 DN2
Typ. gate charge VGE = (QGate) parameter: IC puls = 50 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
10 2
nF
VGE
16 14 12 10 8
C 10 1
800 V
1200 V
Ciss
10 0 6 Coss 4 2 0 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 C 0.9
-1
Crss 0 5 10 15 20 25 30 V 40 VCE
QGate
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4
0.5 2
0.0 0 250 500 750 1000 1250 1500 V 2000 VCE
0 0 250 500 750 1000 1250 1500 V 2000 VCE
Semiconductor Group
6
Jul-31-1996
BSM 50 GB 170 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 1200 V, VGE = 15 V, RG = 27
10 4
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 1200 V, VGE = 15 V, IC = 50 A
10 4
ns t 10
3
ns t tdoff 10 tdoff tdon tr tdon tr
3
10 2 tf
10 2
tf
10 1 0
20
40
60
80
A
120
10 1 0
20
40
60
80
IC
120
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 1200 V, VGE = 15 V, RG = 27
120 mWs 100 E 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 A 120 Eoff Eon
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 1200 V, VGE = 15 V, IC = 50 A
120 mWs 100 E 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 Eoff Eon
IC
120
RG
Semiconductor Group
7
Jul-31-1996
BSM 50 GB 170 DN2
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
100 A
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
Diode
Tj=125C
K/W
IF
80 70 60 50 40 30 20 10 0 0.0
Tj=25C ZthJC
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
0.5
1.0
1.5
2.0
2.5
V VF
3.5
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
Semiconductor Group
8
Jul-31-1996
BSM 50 GB 170 DN2
Circuit Diagram
Package Outlines Dimensions in mm Weight: 250 g
Semiconductor Group
9
Jul-31-1996

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